Supporting the proliferation of digital technologies and industry 4.0, Samsung Electronics Co., Ltd., has come forward to reveal a groundbreaking innovation in the electronics industry. The global leader in memory technology has recently launched the industry’s first memory module incorporating the new Compute Express Link interconnect standard.
Incorporated with Samsung’s Double Data Rate 5 technology, the CXL-based module is expected to allow server systems to significantly scale up the memory bandwidth and capacity, thus accentuating HPC and AI workloads in data centers.
It would be essential to note that Samsung has been partnering with numerous data centers, chipset manufacturers, and servers to design next-generation interface technology, ever since the CXL consortium was formed in 2019.
Reports suggest that unlike any other DDR-based memory, Samsung’s CXL module boasts of the ability to scale memory volume to the terabyte level, while considerably reducing the system inactivity caused by memory caching.
Commenting on the latest launch, VP of the Memory Product Planning Team at Samsung Electronics, Cheolmin Park cited that this new CXL memory module stands to be the industry’s first DRAM-powered memory solution, which is expected to play a crucial role in serving data-intensive applications in data centers as well as cloud environments.
Mr. Park further stated that given these developments, Samsung would also continue to work rigorously for memory interface capacity and innovation development to support the customers, and industry at-large to better manage the demands of more complex, larger, and real-time workloads.
For the record, Samsung’s new module has been successfully authenticated on next-gen server platforms from Intel, indicating the beginning of an era for low latency, high-bandwidth CXL-based memory using the current DDR5 standard.
Once the new CXL-memory module commercializes worldwide, the company is likely to lead the industry in meeting the demand for next-generation superior performance computing technologies and innovations that are largely focused on expanded memory bandwidth and capacity.